Metal-insulator-metal structures have been fabricated by sandwiching polyemeraldine base Langmuir-Blodgett (LB) films between metals like silver and indium vacuumdeposited onto indium-tin-oxide (ITO) glass. These devices have been found to exhibit insulating properties in the absence of a metal oxid
Structural influence on electrical properties of metal-oxide-metal devices
β Scribed by A. Cachard; J.A. Roger; J. Pivot; C. Diaine; C.H.S. Dupuy
- Publisher
- Elsevier Science
- Year
- 1972
- Tongue
- English
- Weight
- 272 KB
- Volume
- 13
- Category
- Article
- ISSN
- 0040-6090
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Metal-insulator-semiconductor (MIS) structures were fabricated by vacuum deposition of various metals like indium, aluminum, and tin on Langmuir-Blodgett (LB) films of cadmium stearate (CdSt,) obtained on polypyrrole (PPY) films electrochemically deposited on indiumtin-oxide glass. Junction paramete