Electrical properties of metal/Langmuir–Blodgett layer/semiconductive devices

✍ Scribed by M. K. Ram; S. Annapoorni; B. D. Malhotra

• Publisher: John Wiley and Sons
• Year: 1996
• Tongue: English
• Weight: 511 KB
• Volume: 60
• Category: Article
• ISSN: 0021-8995
• DOI: 10.1002/(sici)1097-4628(19960418)60:3<407::aid-app14>3.0.co;2-#

✦ Synopsis

Metal-insulator-semiconductor (MIS) structures were fabricated by vacuum deposition of various metals like indium, aluminum, and tin on Langmuir-Blodgett (LB) films of cadmium stearate (CdSt,) obtained on polypyrrole (PPY) films electrochemically deposited on indiumtin-oxide glass. Junction parameters such as rectification ratio, barrier height, and work function of such devices were experimentally determined. Passivation of semiconducting polypyrrole film is seen to result in a lower value of the ideality factor. For example, measured ideality factors of CdSt, LB layer/semiconducting PPY structures are 6.63, 6.57, and 6.54 for various metals like Sn, Al, and In, respectively, in comparison to the values of 8.85, 8.82, and 8.20 obtained with semiconducting PPY interface with same elements. The value of the dielectric constant of the insulating CdSt, LB film was calculated as 1.84 and this is in reasonable agreement with the value (2.13) reported earlier.