Electrical properties of metal/Langmuir-Blodgett (polymeraldine base) layer/metal devices

✍ Scribed by M. K. Ram; R. Gowri; B. D. Malhotra

• Publisher: John Wiley and Sons
• Year: 1997
• Tongue: English
• Weight: 142 KB
• Volume: 63
• Category: Article
• ISSN: 0021-8995
• DOI: 10.1002/(sici)1097-4628(19970110)63:2<141::aid-app1>3.0.co;2-v

✦ Synopsis

Metal-insulator-metal structures have been fabricated by sandwiching polyemeraldine base Langmuir-Blodgett (LB) films between metals like silver and indium vacuumdeposited onto indium-tin-oxide (ITO) glass. These devices have been found to exhibit insulating properties in the absence of a metal oxide layer. Current (I) -voltage (V) and capacitance (C) -voltage (V) measurements have been carried out on such devices. It is seen that these devices show rectification behavior at about 3 V for both forward and reverse bias conditions. However, at low voltages, nonlinear and asymmetric behaviors have been observed, whereas plot of log 1 versus V 1/4 indicates linear characteristics at high fields. The value of the barrier height has been found to be about 1.2 V in agreement with literature, implying Schottky behavior.