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Structural characterization of radiofrequency magnetron sputter deposited SiO 2 thin films

✍ Scribed by Li, Boquan; Fujimoto, Toshiyuki; Kojima, Isao

Book ID
121465174
Publisher
Institute of Physics
Year
1999
Tongue
English
Weight
130 KB
Volume
32
Category
Article
ISSN
0022-3727

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Growth and characterization of gallium o
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## Abstract Undoped and Neodymium‐doped gallium oxide (Ga~2~O~3~) thin films of about 500 nm thickness were successfully grown at different temperatures ranging from 100 up to 600 Β°C by radiofrequency magnetron sputtering. Post‐annealing treatments were carried out at 900 Β°C and 1000 Β°C. The obtain