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Structural Characterization of Pd-doped SnO2 Thin Films Using XPS

✍ Scribed by Cao, Xiaoping; Cao, Lili; Yao, Wenqing; Ye, Xiaoyan

Publisher: John Wiley and Sons
Year: 1996
Tongue: English
Weight: 415 KB
Volume: 24
Category: Article
ISSN: 0142-2421
DOI: 10.1002/(sici)1096-9918(19960916)24:9<662::aid-sia155>3.0.co;2-c

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✦ Synopsis

100084, P. R. China In this paper, the structures of Pd-doped SnO, thin films prepared by a Sol-Gel technique are characterized by x-ray photoelectron spectroscopy, scanning Auger microscopy, x-ray diffraction and differential thermal analysis plus thermogravimetric analysis. It is observed that film structure and the chemical states of Pd and Sn in the thin films change with the temperature of thermal treatment. In the 250-600 "C temperature range, palladium exists in a mixed state, (PdO and PdO,) in the film. Dopant Pd decreases the Fermi level of the SnO, semiconductor by -0.20 eV.

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