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Structural characterization of InN epilayers grown on r -plane sapphire by plasma-assisted MBE

โœ Scribed by A. Lotsari; G. P. Dimitrakopulos; Th. Kehagias; A. O. Ajagunna; E. Iliopoulos; A. Georgakilas; Ph. Komninou


Book ID
112182272
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
475 KB
Volume
9
Category
Article
ISSN
1862-6351

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Characterization of InN epilayers grown
โœ Yan-Hsin Wang; Wei-Li Chen; Ming-Fei Chen ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 475 KB

InN films have been grown by plasma-assisted molecular beam epitaxy (PAMBE) and characterized by various technologies. It was found that the structural, optical and electrical properties can be drastically improved by raising growth temperature from 440 to 525 1C. Grainy morphology was found in the