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Structural characterization of III–V semiconductor surfaces by quantitative aes

✍ Scribed by M. L. González; M. Alonso; F. Soria


Publisher
John Wiley and Sons
Year
1989
Tongue
English
Weight
693 KB
Volume
14
Category
Article
ISSN
0142-2421

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In selective area growth there is a lateral transition from growth to non-growth areas. At this point thc growth is dctcrmined by the lowest growing crystal planes. This review suxnmarizes the tnechanistns during the facet t~)rmation in the InP/GalnAsP material system with respect to the growth cond