Facet formation and characterization of III–V structures grown on patterned surfaces

✍ Scribed by H. Heinecke; M. Wachter; U. Schöffel

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 711 KB
• Volume: 28
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(96)00119-x

✦ Synopsis

In selective area growth there is a lateral transition from growth to non-growth areas. At this point thc growth is dctcrmined by the lowest growing crystal planes. This review suxnmarizes the tnechanistns during the facet t~)rmation in the InP/GalnAsP material system with respect to the growth conditions in metalorganic molecular beam cpitaxy'. The effect of intcrfacct diffusion and the anisotropic surface diffusion process as well as the molecular beam flux dcnsity at the faccts is discussed. Planar selective area cpitaxy (SAE), wht're the faccts can evolve freely, is selected as the starting point. Low lateral growth rates at side wall (011) planes of the structure arc achieved under perpendicular molecular bcatn geometry. The resuhs are transferred to embedded SAE for the lateral coupling of hetcrostructurcs having constant material compositions up to the lateral contact. Applications fbr SAE-grown waveg'uidcs and lascr-waveguide integration arc presented.