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Study of III–V semiconductor band structure by synchrotron photoemission

✍ Scribed by G.P. Williams; F. Cerrina; J. Anderson; G.J. Lapeyre; R.J. Smith; J. Hermanson; J.A. Knapp

Publisher
Elsevier Science
Year
1983
Weight
228 KB
Volume
117-118
Category
Article
ISSN
0378-4363

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## Abstract GaAs crystals and Al~0.43~Ga~0.57~As epitaxial layers of low dislocation density were implanted with 146 keV, 100 keV and 60 keV H^+^ ions and studied by recording of rocking curves, reciprocal space mapping and Bragg‐type section topography. The X‐ray investigation were performed also