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Structural change of laser-irradiated Ge2Sb2Te5 films studied by electrical property measurement

✍ Scribed by Sun Huajun; Hou Lisong; Wu Yiqun; Wei Jingsong

Book ID: 116671512
Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 588 KB
Volume: 354
Category: Article
ISSN: 0022-3093
DOI: 10.1016/j.jnoncrysol.2008.09.018

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## Abstract Amorphous thin films of SnSe~2~ and Ge~2~Sb~2~Te~5~ doped by different amount of silver (0.1, 0.2, 0.5 and 1 Ag atoms per formula unit) have been prepared by pulsed laser deposition (PLD) starting from solid polycrystalline targets. The films were investigated by X‐ray diffraction (XRD)