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Structural and optical characterization of highly Er and Eu doped GaN layers grown by MBE

โœ Scribed by T. Wojtowicz; P. Ruterana; N. Rouseau; G. Halambalakis; O. Briot; V. Katchkanov; S. Dalmasso; R. W. Martin; K. P. O'Donnell


Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
216 KB
Volume
1
Category
Article
ISSN
1862-6351

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Er-doped silicon-rich silicon oxide layers have been grown at 600 1C by magnetron co-sputtering of three confocal cathodes (Si, SiO 2 and Er 2 O 3 ) in pure argon plasma. The structural and optical properties of the layers were examined in the function of deposition and annealing conditions. It was