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Structural and local electrical properties of AlInN/AlN/GaN heterostructures

✍ Scribed by A. Minj; D. Cavalcoli; A. Cavallini

Book ID: 116833915
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 587 KB
Volume: 407
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2011.08.035

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## Abstract A high‐resolution X‐ray diffraction and X‐ray reflectivity study of the structural properties of AlInN/GaN and AlGaInN/GaN high electron mobility transistor structures deposited by molecular beam epitaxy on metal organic chemical vapor deposition GaN/Al~2~O~3~ and GaN/SiC templates is p