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Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures

✍ Scribed by Tülek, Remziye; Ilgaz, Aykut; Gökden, Sibel; Teke, Ali; Öztürk, Mustafa K.; Kasap, Mehmet; Özçelik, Süleyman; Arslan, Engin; Özbay, Ekmel


Book ID
121083968
Publisher
American Institute of Physics
Year
2009
Tongue
English
Weight
879 KB
Volume
105
Category
Article
ISSN
0021-8979

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Resistivity and Hall effect measurements were carried out as a function of magnetic field (0-1.5 T) and temperature (30-300 K) for Al 0.88 In 0.12 N/AlN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition (MOCVD). Magnetic field dependent Hall data were analyzed by using the qu