✦ LIBER ✦

Structural and electronic properties of Ga1−xInx As1−yNy quaternary semiconductor alloy on GaAs substrate

✍ Scribed by Metin Aslan; Battal G. Yalçın; Mehmet Üstündağ

Book ID: 116609017
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 752 KB
Volume: 519
Category: Article
ISSN: 0925-8388
DOI: 10.1016/j.jallcom.2011.12.020

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Theoretical analysis of disorder effects

Theoretical analysis of disorder effects on electronic and optical properties of the quaternary alloy Ga1−xAlxAsySb1−y

✍ M. Rabah; H. Abid; B. Bouhafs; H. Aourag 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 171 KB

Anisotropic structural and electronic pr

Anisotropic structural and electronic properties of InSb/AlxIn1−xSb quantum wells grown on GaAs (0 0 1) substrates

✍ T.D. Mishima; J.C. Keay; N. Goel; M.A. Ball; S.J. Chung; M.B. Johnson; M.B. Sant 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 470 KB

Correlation between optical and electric

Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates

✍ Cui, L. J.; Zeng, Y. P.; Wang, B. Q.; Zhu, Z. P.; Guo, S. L.; Chu, J. H. 📂 Article 📅 2006 🏛 American Institute of Physics 🌐 English ⚖ 437 KB

Combined effects of substrate compliance

Combined effects of substrate compliance and film compositional grading on strain relaxation in layer-by-layer semiconductor heteroepitaxy: the case of InAs/In0.50Ga0.50As/GaAs(1 1 1)A

✍ Luis A Zepeda-Ruiz; W Henry Weinberg; Dimitrios Maroudas 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 532 KB

A systematic theoretical analysis is presented of the combined effects of substrate compliance and film compositional grading on the relaxation of strain due to lattice mismatch in layer-by-layer semiconductor heteroepitaxy. The analysis is based on a combination of continuum elasticity theory and a