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Structural and electrical properties of β-FeSi2 bulk materials for thermoelectric applications

✍ Scribed by H. Yamada; H. Katsumata; D. Yuasa; S. Uekusa; M. Ishiyama; H. Souma; I. Azumaya

Book ID: 113846804
Publisher: Elsevier
Year: 2012
Tongue: English
Weight: 467 KB
Volume: 23
Category: Article
ISSN: 1875-3892
DOI: 10.1016/j.phpro.2012.01.004

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The orthorhombic phase of iron silicide, P-F&i,, is a semiconducting material whose preparation is compatible with silicon processes. Epitaxy on Si has been achieved recently [I]. Its direct gap of 0.85 eV seems to make it suitable