Stress-mediated redistribution of Mn in annealed Si:Mn

✍ Scribed by A. Misiuk; A. Barcz; J. Bak-Misiuk; P. Romanowski; L. Chow; E. Choi

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 201 KB
• Volume: 159-160
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/j.mseb.2008.09.005

✦ Synopsis

Buried amorphous silicon (a-Si) is produced in Czochralski single crystalline silicon implanted at 340 K with Mn + (Si:Mn, 55 Mn + doses, D = 2 × 10 15 or 1.2 × 10 16 cm -2 , energy 160 keV). Stress-mediated redistribution of Mn and solid phase epitaxial re-growth (SPER) of a-Si at up to 1273 K (HT), also under hydrostatic Ar pressure up to 1.1 GPa (HP), have been investigated by SIMS, X-ray and related methods. As-implanted Si:Mn indicates magnetic ordering. SPER depends on Mn + dosage, HT, HP an on processing time. Processing at 870-1000 K results in a minimum in the Mn concentration at ∼0.15 m depth. At 1170 K and above, the diffusion of Mn to the surface increases with HP. Our results help in understanding the mechanisms of SPER and of origin of magnetic ordering in Mn:Si.