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Effect of pressure annealing on structure of Si:Mn

✍ Scribed by A. Misiuk; B. Surma; J. Bak-Misiuk; A. Barcz; W. Jung; W. Osinniy; A. Shalimov


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
177 KB
Volume
9
Category
Article
ISSN
1369-8001

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Stress-mediated redistribution of Mn in
✍ A. Misiuk; A. Barcz; J. Bak-Misiuk; P. Romanowski; L. Chow; E. Choi πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 201 KB

Buried amorphous silicon (a-Si) is produced in Czochralski single crystalline silicon implanted at 340 K with Mn + (Si:Mn, 55 Mn + doses, D = 2 Γ— 10 15 or 1.2 Γ— 10 16 cm -2 , energy 160 keV). Stress-mediated redistribution of Mn and solid phase epitaxial re-growth (SPER) of a-Si at up to 1273 K (HT)