In the present work new results on the formation of oxygen-and carbon-related luminescence centers in Cz-Si heat treated at T ΒΌ 600 C are reported. Some characteristic features of thermal defect formation dependent on the heat treatment regimes were studied. At the early stages of heat treatment two
Stress-induced changes of thermal donor formation in heat-treated Czochralski-grown silicon
β Scribed by V.V. Emtsev; B.A. Andreev; V.Yu. Davydov; D.S. Poloskin; G.A. Oganesyan; D.I. Kryzhkov; V.B. Shmagin; V.V. Emtsev Jr; A. Misiuk; C.A. Londos
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 215 KB
- Volume
- 340-342
- Category
- Article
- ISSN
- 0921-4526
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