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Stress in hydrogenated amorphous silicon determined by X-ray diffraction

✍ Scribed by M. Härting; S. Woodford; D. Knoesen; R. Bucher; D.T. Britton

Book ID
108388615
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
82 KB
Volume
430
Category
Article
ISSN
0040-6090

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Hydrogenated amorphous silicon films 0.45 and 1.12/~m thick, grown by RF glow discharge plasma PECVD on Coming-7059 glass, were irradiated by a 6°Co source (activity 2.8 × 1015 Bq) in the dose range 10-450 kGy at different dose rates. The dark current of the samples, under 100 V appfied voltage, was