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Stress Effects on the Switching Voltage of Metal-SnO2-Si(n)-Si(p+) Devices

✍ Scribed by Phan, H. K. ;Phu, L. H. ;Chiem, C. V.


Publisher
John Wiley and Sons
Year
1983
Tongue
English
Weight
167 KB
Volume
79
Category
Article
ISSN
0031-8965

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We have studied the effects of disorder on surface stress during oxidation. The surface stress change during ion Ž . bombardment and the following plasma oxidation on Si 100 was measured by means of an optical microcantilever technique. We have found compressive stress on Si surface due to disorder