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Stress analyses of GaN film manufactured by ECR plasma-enhanced chemical vapor deposition

✍ Scribed by Fu Silie; Chen Junfang; Gao Peng; Wang Chun-ann


Book ID
113940959
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
829 KB
Volume
86
Category
Article
ISSN
0042-207X

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Silicon nitride films of various compositions have been deposited on silicon substrate by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) technique from mixtures of Ar, N and SiH as precursors. Film 2 4 composition and refractive index as a function of deposition p