Straining of thin Si films by partially oxidized meso-porous Si substrates

✍ Scribed by Lysenko, Vladimir ;Ostapenko, Dmytro ;Bluet, Jean-Marie ;Regregny, Philippe ;Mermoux, Michel ;Boucherif, Abderraouf ;Marty, Olivier ;Grenet, Genevieve ;Skryshevsky, Valery ;Guillot, Gerard

• Book ID: 105365250
• Publisher: John Wiley and Sons
• Year: 2009
• Tongue: English
• Weight: 262 KB
• Volume: 206
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200881103

✦ Synopsis

Abstract

A simple and low‐cost technological approach for the straining of thin crystalline silicon (Si) films using porous silicon (PS) as stress generating nanomaterial is reported. Firstly, a technological approach allowing fabrication of thin Si films on a bulk meso‐PS substrate is described. Secondly, low temperature (<700 °C) oxidation of the PS/Si structures provokes a huge mechanical stress at nanoscale level inside the PS substrate. Consequently, the lateral PS straining induces biaxial deformation of the monocrystalline thin Si layer in the (100) plane parallel to the wafer surface. Raman scattering spectroscopy is used for the evaluation of strain values across the strained thin Si films. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)