Strained silicon heterostructures : materials and devices

✍ Scribed by Maiti, C. K.; Chakrabarti, N. B.; Ray, S. K

Publisher: Institution of Electrical Engineers
Year: 2001
Tongue: English
Leaves: 510
Series: IEE circuits devices and systems series 12
Edition: First Edition
Category: Library

No coin nor oath required. For personal study only.

✦ Synopsis

This book comprehensively covers the areas of materials growth, characterization and descriptions for the new devices in silicon-heterostructure, material systems

✦ Table of Contents

Content: Introduction --
Strained layer epitaxy --
Electronic properties of alloy layers --
Gate dielectrics on strained layers --
SiGe heterojunction bipolar transistors --
Heterostructure field effect transistors --
BICFET, RTD and other devices --
MODFETs --
Contact metallization on strained layers --
Si/SiGe optoelectronics.

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