<p>The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the bo
Silicon Heterostructure Devices
β Scribed by John D. Cressler
- Publisher
- CRC Press
- Year
- 2007
- Tongue
- English
- Leaves
- 468
- Edition
- 1st Ed.
- Category
- Library
No coin nor oath required. For personal study only.
β¦ Synopsis
Putting the spotlight on the most mature Si heterostructure devices and, not surprisingly, the most completely researched, this book covers silicon-based heterostructure devices including SiGe HBTs, heterostructure FET, other heterostructure devices, and optoelectronic components. The chapters discuss overview, characteristics, and derivative applications of each device. The book contains numerous "snapshot" views of the industrial state-of-the-art for SiGe HBT BiMOCS technology. Easy reference appendices provide properties of silicon and germanium, the generalized moll-ross relations, integral charge-control relations, and simple SiGe HBT Compact Model Parameters.
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