Silicon-Germanium Strained Layers and Heterostructures

✍ Scribed by S.C. Jain and M. Willander (Eds.)

Publisher: Elsevier, Academic Press
Year: 2003
Tongue: English
Leaves: 325
Series: Semiconductors and Semimetals 74
Edition: 2
Category: Library

No coin nor oath required. For personal study only.

✦ Synopsis

The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling. * Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject Appropriate for students and senior researchers

✦ Table of Contents

Content:
Preface to the first edition
Pages xi-xii
S.C. Jain

Preface to the second edition
Pages xiii-xiv
S.C. Jain, M. Willander

Chapter 1 Introduction
Pages 1-7

Chapter 2 Strain, stability, reliability and growth Original Research Article
Pages 9-40

Chapter 3 Mechanism of strain relaxation Original Research Article
Pages 41-60

Chapter 4 Strain, growth, and TED in SiGeC layers Original Research Article
Pages 61-90

Chapter 5 Bandstructure and related properties Original Research Article
Pages 91-145

Chapter 6 Heterostructure bipolar transistors Original Research Article
Pages 147-194

Chapter 7 FETs and other devices Original Research Article
Pages 195-241

Bibliography
Pages 243-280

Index
Pages 281-285

Contents of volumes
Pages 287-308

📜 SIMILAR VOLUMES

SiGe and Si Strained-Layer Epitaxy for S

📁 SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

✍ John D. Cressler 📂 Library 📅 2007 🏛 CRC Press 🌐 English

What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous

SiGe and Si Strained-Layer Epitaxy for S

📁 SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

✍ John D. Cressler 📂 Library 📅 2007 🏛 CRC-Press 🌐 English

Strained silicon heterostructures : mate

📁 Strained silicon heterostructures : materials and devices

✍ Maiti, C. K.; Chakrabarti, N. B.; Ray, S. K 📂 Library 📅 2001 🏛 Institution of Electrical Engineers 🌐 English

This book comprehensively covers the areas of materials growth, characterization and descriptions for the new devices in silicon-heterostructure, material systems

Applications of Silicon-Germanium Hetero

📁 Applications of Silicon-Germanium Heterostructure Devices

✍ C.K Maiti (Author); G.A Armstrong (Author) 📂 Library 📅 2001 🏛 CRC Press

<p>The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the bo

Applications of silicon-germanium hetero

📁 Applications of silicon-germanium heterostructure devices

✍ C.K Maiti, G.A Armstrong 📂 Library 📅 2002 🏛 Taylor & Francis 🌐 English

The most significant feature of this work is that it combines three distinct topics - technology, device design and simulation, and applications - in a comprehensive way. <P>Readership <P>This book is intended for use by senior undergraduate or first-year graduate students in Applied Physics,

Silicon Quantum Integrated Circuits: Sil

📁 Silicon Quantum Integrated Circuits: Silicon-Germanium Heterostructure Devices: Basics and Realisations

✍ E. Kasper, D.J. Paul 📂 Library 📅 2005 🏛 Springer 🌐 German

Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mi