Silicon Quantum Integrated Circuits: Silicon-Germanium Heterostructure Devices: Basics and Realisations

✍ Scribed by E. Kasper, D.J. Paul

• Publisher: Springer
• Year: 2005
• Tongue: German
• Leaves: 367
• Series: NanoScience and Technology
• Edition: 1
• Category: Library

✦ Synopsis

Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room temperature operation. The basic physical principles, materials, technological aspects and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.

✦ Table of Contents

Contents......Page 9
1. Introduction......Page 13
1.1 Microelectronics and Optoelectronics......Page 15
1.2 From Microelectronics to Nanoelectronics......Page 19
1.3 Self–ordering......Page 22
1.4 Further Reading......Page 24
2.1 Growth and Preparation Methods (MBE, CVD, Implantation, Annealing)......Page 25
2.2 Segregation and Diffusion of Dopants and Alloy Materials......Page 41
2.3 Lattice Mismatch and its Implication on Critical Thickness and Interface Structure......Page 47
2.4 Virtual Substrates and Strain Relaxation......Page 52
2.5 Further Reading......Page 59
3.1.1 The Wave Behaviour of Particles......Page 60
3.1.2 The Potential Barrier and Quantum Mechanical Tunnelling......Page 61
3.1.3 Quantum Wells......Page 64
3.1.4 The Hydrogen Atom......Page 66
3.2.1 The Free Electron Picture and the Effective Mass......Page 68
3.2.2 The Crystal Structure......Page 70
3.2.4 The Kronig-Penney Model......Page 72
3.2.5 The Tight Binding Model......Page 75
3.2.6 Pseudopotentials and k.p Theory......Page 79
3.2.7 Bandstructures of Real Materials......Page 81
3.3.1 The Density of States......Page 82
3.3.2 Equilibrium Carrier Statistics and Doping......Page 85
3.3.3 Doping: The Extrinsic Semiconductor......Page 91
3.3.4 The Two Dimensional Electron Gas (2DEG)......Page 96
3.4.1 The Drift Current......Page 98
3.4.2 The Diffusion Current and the Einstein Relation......Page 102
3.4.4 The Hall Effect and Mobility Measurements......Page 104
3.4.5 Poisson’s Equation and Gauss’s Law......Page 106
3.4.6 Carrier Concentrations......Page 107
3.5.1 Important Length Scales......Page 108
3.5.2 1D Wires......Page 111
3.6.1 The Vibrations of a 1D Monatomic Lattice......Page 112
3.6.2 The 1D Diatomic Chain......Page 114
3.7.1 Blackbody Radiation......Page 118
3.7.2 Generation and Recombination Processes......Page 120
3.7.3 Intrinsic Band-to-Band Generation-Recombination Processes......Page 121
3.7.4 Extrinsic Shockley-Read-Hall Generation-Recombination Processes......Page 122
3.7.5 Auger Generation-Recombination Processes......Page 124
3.7.6 Impact Ionisation Generation-Recombination Processes......Page 126
3.9 Further Reading......Page 127
4.1 Depletion layer and built in voltage......Page 128
4.2 δ-Doping and n-i-p-i Structures......Page 130
4.3 Heterointerfaces (type I, type II), Abruptness and Height of Barriers......Page 134
4.3.1 Modulation Doping......Page 138
4.3.2 Gated Channel......Page 140
4.4 Influence of Strain on Bandstructure......Page 145
4.4.2 Uniaxial Strain......Page 146
4.5.1 Average Valence Band Energy E[sup(0)][sub(υ)]......Page 149
4.5.2 Compressive Strain......Page 150
4.5.3 Tensile Strain......Page 152
4.6 Further Reading......Page 153
5.1 The p-n Junction......Page 154
5.1.1 The Current Voltage Characteristics of a p-n Junction......Page 157
5.2 The Silicon Bipolar Transistor......Page 161
5.2.1 Operating Parameters and Important Figures of Merit......Page 168
5.3 Metal Oxide Semiconductor Field Effect Transistors MOSFETs......Page 175
5.3.1 The MOS Capacitor......Page 176
5.3.2 Carrier Transport in the MOS Transistor......Page 181
5.3.3 Threshold Voltage Control......Page 186
5.3.4 The Subthreshold Region......Page 187
5.3.5 MOSFET Scaling......Page 188
5.3.6 Short Channel MOSFETs......Page 191
5.3.8 Silicon On Insulator (SOI)......Page 196
5.4 Further Reading......Page 199
6. Heterostructure Bipolar Transistors - HBTs......Page 200
6.1 Trade-off between current gain and speed......Page 203
6.2 The High Speed SiGe HBT......Page 204
6.3 The Linear Graded Profile......Page 210
6.4 SiGe HBT Device Performance......Page 213
6.5 Further Reading......Page 217
7. Hetero Field Effect Transistors (HFETs)......Page 218
7.1 Vertical Heterojunction MOSFETs......Page 221
7.2 Strained-Si CMOS......Page 222
7.4 Modulation Doped Field Effect Transistors (MODFETs)......Page 229
7.4.1 Low Temperature Properties of Two Dimensional Modulation-Doped Electron and Hole Gases......Page 231
7.4.2 Pseudomorphic MODFETs......Page 233
7.4.4 Analytical Description of MODFET Operation......Page 236
7.4.5 SiGe MODFET Performance......Page 242
7.5 Further Reading......Page 243
8.2 Resonant Tunnelling......Page 245
8.2.2 The Single Barrier......Page 246
8.2.3 Double Barriers - The Resonant Tunnelling Diode......Page 249
8.2.4 The Resonant Tunnelling Diode (RTD)......Page 255
8.2.5 Inter-band Esaki Tunnel Diodes......Page 261
8.2.6 Tunnel Diode High Frequency Performance......Page 270
8.2.7 Comparison of Tunnel Diode Results......Page 273
8.3 Real Space Transfer (RST) Devices......Page 274
8.4.1 Introduction and Coulomb Blockade Theory......Page 278
8.4.2 The Quantum Dot, Double Tunnel Junction System......Page 281
8.4.3 Single Electron Transistors......Page 286
8.4.4 Comparisons of Single Electron Devices......Page 288
8.5 Further Reading......Page 289
9.1.1 Basic Photonic Properties......Page 290
9.1.2 p-i-n Photodiodes......Page 294
9.1.3 Avalanche Photodetectors......Page 298
9.1.4 The Heterojunction Internal Photoemission Diode......Page 301
9.1.5 Quantum Well Infrared Photodetectors (QWIPs)......Page 302
9.2 The Quantum Cascade Laser......Page 305
9.2.1 Basic Laser Physics......Page 306
9.2.2 The Si/SiGe Quantum Cascade Laser......Page 311
9.3 Further Reading......Page 318
10.1 The CMOS Inverter and MOS Memory Circuits......Page 319
10.2 Silicon Process Technology......Page 324
10.2.1 Thermal Oxidation......Page 325
10.2.2 Lithography......Page 329
10.2.3 Etching......Page 332
10.3 CMOS......Page 335
10.4 Heterolayer Integration Issues......Page 340
10.5 Bipolar and HBT Fabrication Processes......Page 342
10.6 BiCMOS......Page 345
10.7 Strained-Si CMOS......Page 350
10.9 Fault Tolerant Architectures......Page 352
10.10 Further Reading......Page 354
11. Outlook......Page 355
A. List of variables......Page 360
B. Physical Properties of Important Materials at 300 K......Page 365
C. Fundamental Physical Constants......Page 367