Silicon Quantum Integrated Circuits: Silicon-Germanium Heterostructure Devices: Basics and Realisations

✍ Scribed by Prof. Erich Kasper, Prof. D.J. Paul (auth.)

Publisher: Springer-Verlag Berlin Heidelberg
Year: 2005
Tongue: English
Leaves: 366
Series: NanoScience and Technology
Edition: 1
Category: Library

No coin nor oath required. For personal study only.

✦ Synopsis

Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room temperature operation. The basic physical principles, materials, technological aspects and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.

✦ Table of Contents

Introduction....Pages 1-12
Material Science....Pages 13-47
Resumé of Semiconductor Physics....Pages 49-116
Realisation of Potential Barriers....Pages 117-142
Electronic Device Principles....Pages 143-188
Heterostructure Bipolar Transistors - HBTs....Pages 189-206
Hetero Field Effect Transistors (HFETs)....Pages 207-233
Tunneling Phenomena....Pages 235-279
Optoelectronics....Pages 281-309
Integration....Pages 311-346
Outlook....Pages 347-351

✦ Subjects

Optical and Electronic Materials; Condensed Matter; Nanotechnology; Electronics and Microelectronics, Instrumentation

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