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strained quantum wells

โœ Scribed by Joyce, M. J.; Johnson, M. J.; Gal, M.; Usher, B. F.


Book ID
118264561
Publisher
The American Physical Society
Year
1988
Tongue
English
Weight
149 KB
Volume
38
Category
Article
ISSN
1098-0121

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InGaAs/GaAs MOCVD-grown quantum wells have been investigated. Photoluminescence (PL) measurements have shown heavy-hole-related excitonic transitions within the temperature range from 10 to 100 K for all samples. In room-temperature photoreflectance (PR), sharp heavy-and lighthole excitonic transiti