Strain tensor and electron and hole spectra in self-assembled InGaAs/GaAs and SiGe/Si quantum dots
β Scribed by Hongtao Jiang; Jasprit Singh
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 86 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1386-9477
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Photocurrent spectroscopy is used to investigate the quantum-confined Stark shift, QCSS, of In 0.5 Ga 0.5 As/GaAs self-assembled quantum dots (QDs) grown on (100) and (311)B planes. An asymmetric dependence of the QCSS with respect to the direction of the electric field is observed in both cases. We
We present the first radiative lifetime measurements and magneto-photoluminescence results of excited states in InGaAs/GaAs semiconductor self-assembled quantum dots. By increasing the photo-excitation intensity, excited state interband transitions up to n = 5 can be observed in the emission spectru