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Strain relief by In-doping and its effect on the surface and on the interface structures in (Al)GaN on sapphire grown by metalorganic vapor-phase epitaxy

✍ Scribed by Shigeo Yamaguchi; Michihiko Kariya; Shugo Nitta; Hiroshi Amano; Isamu Akasaki

No coin nor oath required. For personal study only.

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