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Strain relaxation in lattice-mismatched epitaxy

✍ Scribed by Dah-Min David Hwang


Book ID
113300499
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
836 KB
Volume
40
Category
Article
ISSN
0254-0584

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The fabrication of novel optoelectronic devices and integrated circuits requires more ways of combining different materials. In this paper we will briefly review recent developments in the realization of relaxed and strained lattice mismatched heterostructures, with emphasis on GaAs and InP based ma