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Strain relaxation by ion beam mixing in epitaxial W/Mo superlattices

✍ Scribed by S. Mantl; D.B. Poker; K. Reichelt


Book ID
114168135
Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
347 KB
Volume
19-20
Category
Article
ISSN
0168-583X

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Strain relaxation in AlN/GaN heterostruc
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## Abstract The strain distribution and defects in a graded AlN/GaN heterostructure comprising AlN layers from 3 nm up to 100 nm grown by plasma‐assisted MBE were studied using transmission electron microscopy techniques. Gradual strain relaxation was observed as well as strain partitioning between