Strain relaxation in AlN/GaN heterostruc
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Dimitrakopulos, G. P. ;Komninou, Ph. ;Kehagias, Th. ;Sahonta, S.-L. ;Kioseoglou,
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Article
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2008
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John Wiley and Sons
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English
β 384 KB
## Abstract The strain distribution and defects in a graded AlN/GaN heterostructure comprising AlN layers from 3 nm up to 100 nm grown by plasmaβassisted MBE were studied using transmission electron microscopy techniques. Gradual strain relaxation was observed as well as strain partitioning between