Strain in thick epitaxial layers
β Scribed by K. Bickmann; J. Hauck
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 768 KB
- Volume
- 254
- Category
- Article
- ISSN
- 0040-6090
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π SIMILAR VOLUMES
Using molecular static simulations we have studied possible mechanisms of stress relaxation with misfit dislocation nucleation in strained heteroepitaxial layers. Two-dimensional models of atomic systems with Lennard-Jones type potential were considered. Combination of total energy minimization with
## Stress, Strain, and Symmetry of Pseudomorphically Grown Epitaxial Layers The complete stress and strain tensors and the point symmetry of pseudomorphically grown epitaxial layers are calculated from the epitaxial relationship and the elastic constants of the deposit material. The angle misalign