Strain effects in epitaxial monolayer structures: SiGe and SiSiO2 systems

✍ Scribed by J. Bevk; L.C. Feldman; T.P. Pearsall; G.P. Schwartz; A. Ourmazd

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 1007 KB
• Volume: 6
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(90)90092-p

✦ Synopsis

Stram due to lattice mismatch at semtconductot mterfaces plays an important role m determining both the thin film growth mechamsm~ and electromc 3mwture and phy~wal propertws of mate-rtal3 The 5t-Ge system with tt~ 4% lattice nusmatch of Jet, an opportunity to study various strata-related mterface phenomena, and to exploit strum effects tn novel optoelecttontc devzces A similar mterplay of science attd technology exists m the ~t-StO_, O,stem. where modern e2~penmental techmque~ continue to provtde new m~tghts into the atonuc 3tructure oJ this technologzcally important interface