In order to directly control the size and in particular the position ofnanostructures naturally formed on high-index semiconductor surfaces during molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE), the growth on patterned high-index GaAs substrates is investigated. During MBE
β¦ LIBER β¦
Strain-driven self-organization of nanostructures on semiconductor surfaces
β Scribed by V.A. Shchukin; D. Bimberg
- Book ID
- 106023435
- Publisher
- Springer
- Year
- 1998
- Tongue
- English
- Weight
- 546 KB
- Volume
- 67
- Category
- Article
- ISSN
- 1432-0630
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