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Growth and self-organization of nanostructures on interlayer surfaces of A2VB3VIlayered crystals

✍ Scribed by A. N. Georgobiani; A. M. Pashaev; B. G. Tagiev; F. K. Aleskerov; O. B. Tagiev; K. Sh. Kakhramanov

Book ID
110167166
Publisher
SP MAIK Nauka/Interperiodica
Year
2011
Tongue
English
Weight
579 KB
Volume
47
Category
Article
ISSN
0020-1685

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In order to directly control the size and in particular the position ofnanostructures naturally formed on high-index semiconductor surfaces during molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE), the growth on patterned high-index GaAs substrates is investigated. During MBE