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Strain and defect engineering in Si/Si3N4/Si by high temperature–pressure treatment

✍ Scribed by A. Misiuk; B. Surma; A. Barcz; K. Orlinska; J. Bak-Misiuk; I.V. Antonova; S. Dub

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
189 KB
Volume
124-125
Category
Article
ISSN
0921-5107

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## Abstract The phase boundary between β‐Si~3~N~4~ and γ‐Si~3~N~4~ is investigated at high pressure and high temperature using first‐principles lattice dynamics calculations within the quasi‐harmonic approximation. We find a positive slope of the phase boundary, hence, at higher temperatures it req