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Raman Spectroscopy of γ-Si3N4 and γ-Ge3N4 Nitride Spinel Phases Formed at High Pressure and High Temperature: Evidence for Defect Formation in Nitride Spinels.

✍ Scribed by Emmanuel Soignard; Paul F. McMillan

Publisher
John Wiley and Sons
Year
2004
Weight
10 KB
Volume
35
Category
Article
ISSN
0931-7597

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