The deep levels associated with vacancies and substitutional impurity atoms in \((\mathrm{Si})_{\mathrm{n}} /(\mathrm{Ge})_{\mathrm{m}}\) strained-layer superlattices (SLSLs) grown on \(\mathrm{Si}_{1-\mathrm{x}} \mathrm{Ge}_{\mathrm{x}}\) substrates are investigated theoretically. The band structur
β¦ LIBER β¦
Strain adjustment in ultra thin Si/Ge superlattices
β Scribed by E. Kasper; H. Kibbel; H. Presting
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 340 KB
- Volume
- 183
- Category
- Article
- ISSN
- 0040-6090
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