Optical transitions in strained Ge/Si superlattices
✍ Scribed by U. Schmid; J. Humlíček; F. Lukeš; M. Cardona; H. Presting; H. Kibbel; E. Kasper; K. Eberl; W. Wegscheider; G. Abstreiter
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 409 KB
- Volume
- 222
- Category
- Article
- ISSN
- 0040-6090
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The deep levels associated with vacancies and substitutional impurity atoms in \((\mathrm{Si})_{\mathrm{n}} /(\mathrm{Ge})_{\mathrm{m}}\) strained-layer superlattices (SLSLs) grown on \(\mathrm{Si}_{1-\mathrm{x}} \mathrm{Ge}_{\mathrm{x}}\) substrates are investigated theoretically. The band structur
This paper reports temperature-dependent thermal conductivity measurements in the crossplane direction of symmetrically strained Si/Ge superlattices, and the effect of doping, period thickness and dislocations on the thermal conductivity reduction of Si/Ge superlattices. The Si/Ge superlattices are