STM surface modification of the Si–SiO2–polymer system
✍ Scribed by V.M. Kornilov; A.N. Lachinov
- Book ID
- 104305926
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 877 KB
- Volume
- 69
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
This paper presents the results of a STM investigation of the Si-SiO and Si-SiO -polymer systems in air. Depending on 2 2 the scanning parameters, such as the applied voltage and tunneling current, a modification of the Si-SiO surface was 2 observed during the experiments. The possibility of a reversible modification was demonstrated. A thin polymer film was used to exclude the adsorption-desorption and electrochemical processes on the Si surface. Modification of the Si-SiO -2 polymer surface was observed at scanning parameters similar to those used for modification of the Si-SiO system. The 2 electronic mechanism of the surface modification based on tunneling of the charge through the oxide layer and its influence on the STM tunneling current is discussed.
📜 SIMILAR VOLUMES
Si-rich-SiO 2 layers with excess silicon of 45-50% were grown by RF magnetron co-sputtering from pure SiO 2 and Si targets and were studied by Raman scattering, HRTEM, electron-paramagnetic resonance and X-ray diffraction (XRD) methods as well as by photo-voltage technique operated at different temp