๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Surface charge and stress in the Si/SiO2 system

โœ Scribed by S.D. Brotherton; T.G. Read; D.R. Lamb; A.F.W. Willoughby


Book ID
107856033
Publisher
Elsevier Science
Year
1973
Tongue
English
Weight
549 KB
Volume
16
Category
Article
ISSN
0038-1101

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


STM surface modification of the Siโ€“SiO2โ€“
โœ V.M. Kornilov; A.N. Lachinov ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 877 KB

This paper presents the results of a STM investigation of the Si-SiO and Si-SiO -polymer systems in air. Depending on 2 2 the scanning parameters, such as the applied voltage and tunneling current, a modification of the Si-SiO surface was 2 observed during the experiments. The possibility of a rever

The peculiarities of Si/SiO2 interfaces
โœ T. Kryshtab; G. Gรณmez Gasga; N. Korsunska; M. Baran; S. Kirillova; L. Khomenkova ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 281 KB

Si-rich-SiO 2 layers with excess silicon of 45-50% were grown by RF magnetron co-sputtering from pure SiO 2 and Si targets and were studied by Raman scattering, HRTEM, electron-paramagnetic resonance and X-ray diffraction (XRD) methods as well as by photo-voltage technique operated at different temp