Steady-State Kinetics of Formation of Anodic Oxide Films on Tantalum in Sulphuric Acid
โ Scribed by Young, L.
- Book ID
- 120145304
- Publisher
- The Royal Society
- Year
- 1960
- Tongue
- English
- Weight
- 806 KB
- Volume
- 258
- Category
- Article
- ISSN
- 0962-8444
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
The variations of the equivalent parallel resistance and capacitance of anodic films formed on Ta and Nb in varying concentrations of H2SO4 suggest that the volume of film formed per coulomb is much greater in 100)~, acid, although the dielectric constant is substantially unchanged. The field requir
The anodic films formed on tantalum in many non-aqueous solutions have been found to consist of two layers. Next to the metal there is a layer of Ta206 with the same characteristics as that of films formed in aqueous electrolytes, while between the TaeOb film and the solution there is a layer which