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Statistical photoluminescence of dislocations and associated defects in heteroepitaxial GaN grown by metal organic chemical vapor deposition

✍ Scribed by Macht, L.; Weyher, J. L.; Grzegorczyk, A.; Larsen, P. K.

Book ID: 121737661
Publisher: The American Physical Society
Year: 2005
Tongue: English
Weight: 134 KB
Volume: 71
Category: Article
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.71.073309

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