𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Phase-separation suppression in GaN-rich side of GaNP alloys grown by metal–organic chemical vapor deposition

✍ Scribed by D.J. Chen; B. Shen; Z.X. Bi; K.X. Zhang; S.L. Gu; R. Zhang; Y. Shi; Y.D. Zheng; X.H. Sun; S.K. Wan; Z.G. Wang

Book ID
106018911
Publisher
Springer
Year
2005
Tongue
English
Weight
411 KB
Volume
80
Category
Article
ISSN
1432-0630

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electroluminescence Studies of Nitride-R
Electroluminescence Studies of Nitride-Rich GaN1?xPx SQW Structure Grown by Laser-Assisted Metal-Organic Chemical Vapor Deposition
✍ Kikawa, J. ;Yoshida, S. ;Itoh, Y. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 83 KB 👁 2 views

Electroluminescence (EL) measurements of nitride-rich GaN 1--x P x single quantum well (SQW) structures, grown using laser-assisted metalorganic chemical vapor deposition (LA-MOCVD), were performed. The maximum red shift of GaN 1--x P x to the GaN was 50 meV from the result of photoluminescence (PL)

Study of the stacking faults in a-plane
Study of the stacking faults in a-plane GaN on r-plane sapphire grown by metal–organic chemical vapor deposition
✍ H. Fang; L.W. Sang; W.X. Zhu; H. Long; T.J. Yu; Z.J. Yang; G.Y. Zhang 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 596 KB

Optically specular a-plane GaN was grown on r-sapphire substrate by metal-organic chemical vapor deposition (MOCVD). Surface morphology and crystal structure anisotropic behavior related to defects with a specific distribution were characterized by X-ray diffraction (XRD) and atomic force microscopy