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DLTS and PL study of defects in InAlAs/InP heterojunctions grown by metal organic chemical vapor deposition

✍ Scribed by S. Bouzgarrou; M.M. Ben Salem; F. Hassen; A. Kalboussi; A. Souifi

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
337 KB
Volume
116
Category
Article
ISSN
0921-5107

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Optically specular a-plane GaN was grown on r-sapphire substrate by metal-organic chemical vapor deposition (MOCVD). Surface morphology and crystal structure anisotropic behavior related to defects with a specific distribution were characterized by X-ray diffraction (XRD) and atomic force microscopy