๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Stacking Faults and Luminescence Property of InGaN Nanowires

โœ Scribed by Tabata, Takuya; Paek, Jihyun; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi


Book ID
127198234
Publisher
Institute of Pure and Applied Physics
Year
2013
Tongue
English
Weight
535 KB
Volume
52
Category
Article
ISSN
0021-4922

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Luminescence from stacking faults in 4H
โœ Sridhara, S. G.; Carlsson, F. H. C.; Bergman, J. P.; Janzen, E. ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› American Institute of Physics ๐ŸŒ English โš– 418 KB
Luminescence from stacking faults in gal
โœ Liu, R.; Bell, A.; Ponce, F. A.; Chen, C. Q.; Yang, J. W.; Khan, M. A. ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› American Institute of Physics ๐ŸŒ English โš– 650 KB
Luminescence properties of isolated InGa
โœ Martin, R. W. ;Edwards, P. R. ;Taylor, R. A. ;Rice, J. H. ;Na, J. H. ;Robinson, ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 140 KB

## Abstract In~__x__~Ga~1โ€“__x__~N quantum dots have been fabricated by the selective growth of GaN microโ€pyramid arrays topped with InGaN/GaN quantum wells. The spatiallyโ€ and spectrallyโ€resolved luminescence properties of these structures were measured using lowโ€temperature microโ€photoluminescence