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Luminescence from stacking faults in gallium nitride

✍ Scribed by Liu, R.; Bell, A.; Ponce, F. A.; Chen, C. Q.; Yang, J. W.; Khan, M. A.

Book ID
121083965
Publisher
American Institute of Physics
Year
2005
Tongue
English
Weight
650 KB
Volume
86
Category
Article
ISSN
0003-6951

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## Abstract Vapour grown ZnS and AlN crystals of wurtzite structure are studied by transmission electron microscopy. The habit plane of the ZnS crystals is γ€ˆ1120〉 and that of AIN (0001). The stacking fault energy is negative in hexagonal ZnS and positive in AlN at 20 Β°C so that different patterns o