𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Stabilization of cubic silicon carbide

✍ Scribed by A. Addamiano; L.S. Staikoff

Publisher
Elsevier Science
Year
1965
Tongue
English
Weight
210 KB
Volume
26
Category
Article
ISSN
0022-3697

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Donors in cubic silicon carbide
Donors in cubic silicon carbide
✍ W.J Moore; J.A Freitas Jr.; P.J Lin-Chung πŸ“‚ Article πŸ“… 1995 πŸ› Elsevier Science 🌐 English βš– 367 KB
Intrinsic Defects in Cubic Silicon Carbi
Intrinsic Defects in Cubic Silicon Carbide
✍ Itoh, H. ;Kawasuso, A. ;Ohshima, T. ;Yoshikawa, M. ;Nashiyama, I. ;Tanigawa, S. πŸ“‚ Article πŸ“… 1997 πŸ› John Wiley and Sons 🌐 English βš– 431 KB
Magnetic properties of Mn-doped cubic si
Magnetic properties of Mn-doped cubic silicon carbide
✍ S.B. Ma; Y.P. Sun; B.C. Zhao; P. Tong; X.B. Zhu; W.H. Song πŸ“‚ Article πŸ“… 2007 πŸ› Elsevier Science 🌐 English βš– 206 KB

Bulk polycrystalline Si 1Γ€x Mn x C (0pxp0.1) samples were prepared by the solid-state reaction method. Their structural and magnetic properties had been investigated. Powder X-ray diffraction analysis demonstrates that the appropriate Mn doping does not change the crystal structure of cubic silicon

CBr4 as precursor for VPE growth of cubi
CBr4 as precursor for VPE growth of cubic silicon carbide
✍ B. E. Watts; M. Bosi; G. Attolini; G. Battistig; L. Dobos; B. PΓ©cz πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 223 KB

## Abstract This work presents a study of carbon tetrabromide (CBr~4~) as precursor to deposit 3C‐SiC on (001) and (111) Si by VPE technique at temperatures ranging between 1000 Β°C and 1250 Β°C. TEM, AFM and SEM results indicate that the epitaxy proceeds as a 3D growth of uncoalesced islands at low