CBr4 as precursor for VPE growth of cubic silicon carbide

✍ Scribed by B. E. Watts; M. Bosi; G. Attolini; G. Battistig; L. Dobos; B. Pécz

• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 223 KB
• Volume: 45
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.200900590

✦ Synopsis

Abstract

This work presents a study of carbon tetrabromide (CBr~4~) as precursor to deposit 3C‐SiC on (001) and (111) Si by VPE technique at temperatures ranging between 1000 °C and 1250 °C. TEM, AFM and SEM results indicate that the epitaxy proceeds as a 3D growth of uncoalesced islands at low temperature, whereas a continuous crystalline layer with hillocks on top is obtained above 1200 °C. The hillocks observed at high temperature appear well faceted and their shape and orientation are analyzed in detail by AFM, showing a {311} preferred orientation. 3D island growth was suppressed by adding C~3~H~8~ to the precursor gases. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)